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BDY55 Specs and Replacement

Type Designator: BDY55

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 115 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

 BDY55 Substitution

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BDY55 datasheet

 ..1. Size:158K  comset

bdy55 bdy56.pdf pdf_icon

BDY55

BDY55 BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY55 60 VCEO Collector-Emitter Voltage V BDY56 120 BDY55 100 VCBO Collector-Base Voltage V BDY56 150 BDY55 VEBO Emitter-Base Voltage 7V BDY56 BDY55 IC Collector Current... See More ⇒

 ..2. Size:207K  inchange semiconductor

bdy55.pdf pdf_icon

BDY55

isc Silicon NPN Power Transistor BDY55 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM ... See More ⇒

 0.1. Size:128K  comset

bdy55-bdy56.pdf pdf_icon

BDY55

NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY55 60 VCEO Collector-Emitter Voltage V BDY56 120 BDY55 100 VCBO Collector-Base Voltage V BDY56 150 BDY55 VEBO Emitter-Base Voltage 7 V BDY56 BDY55 I... See More ⇒

 0.2. Size:11K  semelab

bdy55x.pdf pdf_icon

BDY55

BDY55X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒

Detailed specifications: BDY47, BDY48, BDY48-200, BDY48-300, BDY48-400, BDY49, BDY53, BDY54, BC549, BDY56, BDY57, BDY57A, BDY58, BDY58R, BDY60, BDY60A, BDY60B

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