BDY78 Specs and Replacement
Type Designator: BDY78
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 55 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO66
BDY78 Substitution
- BJT ⓘ Cross-Reference Search
BDY78 datasheet
isc Silicon NPN Power Transistor BDY78 DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 25W @T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C... See More ⇒
Detailed specifications: BDY70 , BDY71 , BDY72 , BDY73 , BDY74 , BDY75 , BDY76 , BDY77 , 2SC5200 , BDY79 , BDY80 , BDY80A , BDY80B , BDY80C , BDY81 , BDY81A , BDY81B .
History: BDX86 | BDY81C | BDY19 | BDX73
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