All Transistors. BDY80A Datasheet

 

BDY80A Datasheet and Replacement


   Type Designator: BDY80A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

 BDY80A Substitution

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BDY80A Datasheet (PDF)

 9.1. Size:217K  inchange semiconductor
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BDY80A

isc Silicon NPN Power Transistor BDY80DESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY82Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: BDY73 , BDY74 , BDY75 , BDY76 , BDY77 , BDY78 , BDY79 , BDY80 , 2N3055 , BDY80B , BDY80C , BDY81 , BDY81A , BDY81B , BDY81C , BDY82 , BDY82A .

History: BC268B | ECG129 | BC556BP | SK9132 | BC212KA | 2SA1391 | GT2695

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