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BDY81 Specs and Replacement

Type Designator: BDY81

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

 BDY81 Substitution

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BDY81 datasheet

 ..1. Size:217K  inchange semiconductor

bdy81.pdf pdf_icon

BDY81

isc Silicon NPN Power Transistor BDY81 DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 36W @T = 25 C C Complement to Type BDY83 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

Detailed specifications: BDY76 , BDY77 , BDY78 , BDY79 , BDY80 , BDY80A , BDY80B , BDY80C , C945 , BDY81A , BDY81B , BDY81C , BDY82 , BDY82A , BDY82B , BDY82C , BDY83 .

History: BDY83B | BDX78F | BDX87B | BDY90

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