All Transistors. BDY81C Datasheet

 

BDY81C Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDY81C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220

 BDY81C Transistor Equivalent Substitute - Cross-Reference Search

   

BDY81C Datasheet (PDF)

 9.1. Size:217K  inchange semiconductor
 bdy81.pdf

BDY81C BDY81C

isc Silicon NPN Power Transistor BDY81DESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY83Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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