All Transistors. BDY81C Datasheet

 

BDY81C Datasheet and Replacement


   Type Designator: BDY81C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220
 

 BDY81C Substitution

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BDY81C Datasheet (PDF)

 9.1. Size:217K  inchange semiconductor
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BDY81C

isc Silicon NPN Power Transistor BDY81DESCRIPTIONContinuous Collector Current-I = 4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY83Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: BDY79 , BDY80 , BDY80A , BDY80B , BDY80C , BDY81 , BDY81A , BDY81B , C5198 , BDY82 , BDY82A , BDY82B , BDY82C , BDY83 , BDY83A , BDY83B , BDY83C .

History: 2SA1249S | BDX63B | 2N5417 | BC408A | NB013FJ | 2N2341 | 2SA780A

Keywords - BDY81C transistor datasheet

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