BDY81C Specs and Replacement
Type Designator: BDY81C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO220
BDY81C Substitution
- BJT ⓘ Cross-Reference Search
BDY81C datasheet
isc Silicon NPN Power Transistor BDY81 DESCRIPTION Continuous Collector Current-I = 4A C Collector Power Dissipation- P = 36W @T = 25 C C Complement to Type BDY83 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Detailed specifications: BDY79 , BDY80 , BDY80A , BDY80B , BDY80C , BDY81 , BDY81A , BDY81B , 2N3055 , BDY82 , BDY82A , BDY82B , BDY82C , BDY83 , BDY83A , BDY83B , BDY83C .
Keywords - BDY81C pdf specs
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