BDY83 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY83
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 0.8 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
BDY83 Transistor Equivalent Substitute - Cross-Reference Search
BDY83 Datasheet (PDF)
..1. Size:220K inchange semiconductor
bdy83.pdf
bdy83.pdf
isc Silicon PNP Power Transistor BDY83DESCRIPTIONContinuous Collector Current-I = -4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY81Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
Datasheet: BDY81 , BDY81A , BDY81B , BDY81C , BDY82 , BDY82A , BDY82B , BDY82C , 2SA1943 , BDY83A , BDY83B , BDY83C , BDY87 , BDY88 , BDY89 , BDY90 , BDY90A .
