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BDY83A Specs and Replacement

Type Designator: BDY83A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 0.8 MHz

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO220

 BDY83A Substitution

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BDY83A datasheet

 9.1. Size:220K  inchange semiconductor

bdy83.pdf pdf_icon

BDY83A

isc Silicon PNP Power Transistor BDY83 DESCRIPTION Continuous Collector Current-I = -4A C Collector Power Dissipation- P = 36W @T = 25 C C Complement to Type BDY81 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒

Detailed specifications: BDY81A , BDY81B , BDY81C , BDY82 , BDY82A , BDY82B , BDY82C , BDY83 , 2SA1943 , BDY83B , BDY83C , BDY87 , BDY88 , BDY89 , BDY90 , BDY90A , BDY91 .

History: BDX78F | BDY90 | BDY81 | BDY83B | BDX87B

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History: BDX78F | BDY90 | BDY81 | BDY83B | BDX87B

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