All Transistors. BDY83B Datasheet

 

BDY83B Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDY83B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220

 BDY83B Transistor Equivalent Substitute - Cross-Reference Search

   

BDY83B Datasheet (PDF)

 9.1. Size:220K  inchange semiconductor
 bdy83.pdf

BDY83B BDY83B

isc Silicon PNP Power Transistor BDY83DESCRIPTIONContinuous Collector Current-I = -4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY81Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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