All Transistors. BDY83B Datasheet

 

BDY83B Datasheet and Replacement


   Type Designator: BDY83B
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 0.8 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220
 

 BDY83B Substitution

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BDY83B Datasheet (PDF)

 9.1. Size:220K  inchange semiconductor
 bdy83.pdf pdf_icon

BDY83B

isc Silicon PNP Power Transistor BDY83DESCRIPTIONContinuous Collector Current-I = -4ACCollector Power Dissipation-: P = 36W @T = 25C CComplement to Type BDY81Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KT368BM | 40244 | 2SD1852 | AD103III

Keywords - BDY83B transistor datasheet

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