BDY83C Specs and Replacement
Type Designator: BDY83C
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO220
BDY83C Substitution
- BJT ⓘ Cross-Reference Search
BDY83C datasheet
isc Silicon PNP Power Transistor BDY83 DESCRIPTION Continuous Collector Current-I = -4A C Collector Power Dissipation- P = 36W @T = 25 C C Complement to Type BDY81 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
Detailed specifications: BDY81C , BDY82 , BDY82A , BDY82B , BDY82C , BDY83 , BDY83A , BDY83B , A1015 , BDY87 , BDY88 , BDY89 , BDY90 , BDY90A , BDY91 , BDY92 , BDY93 .
Keywords - BDY83C pdf specs
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