BDY90 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY90
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BDY90 Transistor Equivalent Substitute - Cross-Reference Search
BDY90 Datasheet (PDF)
bdy90.pdf
BDY90HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTION The BDY90 is a silicon epitaxial planar NPN1power transistors in Jedec TO-3 metal case. Theyare intented for use in switching and linear 2applications in military and industrial equipment.TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIM
bdy90.pdf
isc Silicon NPN Power Transistor BDY90DESCRIPTIONHigh DC Current Gain-: h = 30-120@I = 5AFE CExcellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching-control amplifiers, powergates,switching regulators, converters, and inverters.ABSOLUTE MAXIMUM
bdy90p.pdf
BDY90PNPN SILICON POWER TRANSISTOR NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATIONVOLTAGE FAST-SWITCHING SPEEDAPPLICATION GENERAL PURPOSE SWITCHINGAPPLICATIONS GENERAL PURPOSE AMPLIFIERS 32 DC CURRENT AND BATTERY OPERATED1ELECTRONIC BALLAST TO-220DESCRIPTION The BDY90P is a silicon multiepitaxial planarNPN power transistors in TO-220 case intentedfor use in
bdy90s.pdf
BDY90SDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
bdy90a.pdf
isc Silicon NPN Power Transistor BDY90ADESCRIPTIONHigh Current CapabilityCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators and switching control amplifiers.ABSOLUTE MAXIMUM RATI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
