BDY90 PDF and Equivalents Search

 

BDY90 Specs and Replacement

Type Designator: BDY90

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 35 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

 BDY90 Substitution

- BJT ⓘ Cross-Reference Search

 

BDY90 datasheet

 ..1. Size:62K  st

bdy90.pdf pdf_icon

BDY90

BDY90 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDY90 is a silicon epitaxial planar NPN 1 power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear 2 applications in military and industrial equipment. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIM... See More ⇒

 ..2. Size:207K  inchange semiconductor

bdy90.pdf pdf_icon

BDY90

isc Silicon NPN Power Transistor BDY90 DESCRIPTION High DC Current Gain- h = 30-120@I = 5A FE C Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters. ABSOLUTE MAXIMUM... See More ⇒

 0.1. Size:62K  st

bdy90p.pdf pdf_icon

BDY90

BDY90P NPN SILICON POWER TRANSISTOR NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED APPLICATION GENERAL PURPOSE SWITCHING APPLICATIONS GENERAL PURPOSE AMPLIFIERS 3 2 DC CURRENT AND BATTERY OPERATED 1 ELECTRONIC BALLAST TO-220 DESCRIPTION The BDY90P is a silicon multiepitaxial planar NPN power transistors in TO-220 case intented for use in ... See More ⇒

 0.2. Size:11K  semelab

bdy90s.pdf pdf_icon

BDY90

BDY90S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒

Detailed specifications: BDY82C , BDY83 , BDY83A , BDY83B , BDY83C , BDY87 , BDY88 , BDY89 , D882 , BDY90A , BDY91 , BDY92 , BDY93 , BDY93-01 , BDY94 , BDY94-01 , BDY95 .

History: BDX87B

Keywords - BDY90 pdf specs

 BDY90 cross reference

 BDY90 equivalent finder

 BDY90 pdf lookup

 BDY90 substitution

 BDY90 replacement

 

 

 


History: BDX87B

🌐 : EN  ES  РУ

social

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y

 

 

 

Popular searches

bc560c | ksa1220ay | irf 830 | mpsa56 transistor | transistor 2222a | 8050 transistor | bc238 | 2sb772

 

 

↑ Back to Top
.