All Transistors. BDY91 Datasheet

 

BDY91 Datasheet and Replacement


   Type Designator: BDY91
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 35 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
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BDY91 Datasheet (PDF)

 ..1. Size:11K  semelab
 bdy91.pdf pdf_icon

BDY91

BDY91Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 ..2. Size:207K  inchange semiconductor
 bdy91.pdf pdf_icon

BDY91

isc Silicon NPN Power Transistor BDY91DESCRIPTIONHigh DC Current Gain-: h = 30-120@I = 5AFE CExcellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching-control amplifiers, powergates,switching regulators, converters, and inverters.ABSOLUTE MAXIMUM

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | GF129 | GT322G | BUT93 | CSC3329GR | DDTA143XCA

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