BDY91 Specs and Replacement
Type Designator: BDY91
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO3
BDY91 Substitution
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BDY91 datasheet
BDY91 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
isc Silicon NPN Power Transistor BDY91 DESCRIPTION High DC Current Gain- h = 30-120@I = 5A FE C Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters. ABSOLUTE MAXIMUM... See More ⇒
Detailed specifications: BDY83A , BDY83B , BDY83C , BDY87 , BDY88 , BDY89 , BDY90 , BDY90A , TIP42C , BDY92 , BDY93 , BDY93-01 , BDY94 , BDY94-01 , BDY95 , BDY96 , BDY96-01 .
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