BDY93-01 Specs and Replacement
Type Designator: BDY93-01
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BDY93-01 Substitution
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BDY93-01 datasheet
BDY93 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 350V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac... See More ⇒
isc Silicon NPN Power Transistors BDY93 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 350V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒
Detailed specifications: BDY87 , BDY88 , BDY89 , BDY90 , BDY90A , BDY91 , BDY92 , BDY93 , A1941 , BDY94 , BDY94-01 , BDY95 , BDY96 , BDY96-01 , BDY97 , BDY97-01 , BDY98 .
Keywords - BDY93-01 pdf specs
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History: BC857ALT1 | BDY12-10
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