BDY94-01 Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY94-01
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BDY94-01 Transistor Equivalent Substitute - Cross-Reference Search
BDY94-01 Datasheet (PDF)
bdy94.pdf
BDY94Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac
bdy94.pdf
isc Silicon NPN Power Transistors BDY94DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as high-speed power switch at highvoltage.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo
Datasheet: BDY89 , BDY90 , BDY90A , BDY91 , BDY92 , BDY93 , BDY93-01 , BDY94 , BC548 , BDY95 , BDY96 , BDY96-01 , BDY97 , BDY97-01 , BDY98 , BDY99 , BEL100N .
History: MJ920 | DBC203 | D45VH2 | 2SA1213O-G
History: MJ920 | DBC203 | D45VH2 | 2SA1213O-G
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