All Transistors. BDY94-01 Datasheet

 

BDY94-01 Datasheet and Replacement


   Type Designator: BDY94-01
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
      - BJT Cross-Reference Search

   

BDY94-01 Datasheet (PDF)

 9.1. Size:11K  semelab
 bdy94.pdf pdf_icon

BDY94-01

BDY94Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 9.2. Size:202K  inchange semiconductor
 bdy94.pdf pdf_icon

BDY94-01

isc Silicon NPN Power Transistors BDY94DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as high-speed power switch at highvoltage.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BCP68-16 | 2SB648C | 2N944 | MMBT3645 | DTL1642 | 2N5529 | 3DD5G

Keywords - BDY94-01 transistor datasheet

 BDY94-01 cross reference
 BDY94-01 equivalent finder
 BDY94-01 lookup
 BDY94-01 substitution
 BDY94-01 replacement

 

 
Back to Top

 


 
.