BDY96 Specs and Replacement
Type Designator: BDY96
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 750 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BDY96 Substitution
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BDY96 datasheet
isc Silicon NPN Power Transistor BDY96 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching regulators applications. BSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒
Detailed specifications: BDY90A , BDY91 , BDY92 , BDY93 , BDY93-01 , BDY94 , BDY94-01 , BDY95 , 13003 , BDY96-01 , BDY97 , BDY97-01 , BDY98 , BDY99 , BEL100N , BEL100P , BEL149 .
History: BDX86C
Keywords - BDY96 pdf specs
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History: BDX86C
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