All Transistors. BDY96 Datasheet

 

BDY96 Datasheet and Replacement


   Type Designator: BDY96
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 750 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 
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BDY96 Datasheet (PDF)

 ..1. Size:202K  inchange semiconductor
 bdy96.pdf pdf_icon

BDY96

isc Silicon NPN Power Transistor BDY96DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators applications.BSOLUTE MAXIMUM RATINGS(T =25

 0.1. Size:301K  njs
 bdy96d.pdf pdf_icon

BDY96

 0.2. Size:207K  inchange semiconductor
 bdy96d.pdf pdf_icon

BDY96

isc Silicon NPN Power Transistor BDY96DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators applications.ABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: BDY90A , BDY91 , BDY92 , BDY93 , BDY93-01 , BDY94 , BDY94-01 , BDY95 , S8050 , BDY96-01 , BDY97 , BDY97-01 , BDY98 , BDY99 , BEL100N , BEL100P , BEL149 .

History: 2SB626 | 2N2964 | MMBT3646 | RCA8203A

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