BDY96-01 Datasheet and Replacement
Type Designator: BDY96-01
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BDY96-01 Substitution
BDY96-01 Datasheet (PDF)
bdy96d.pdf

isc Silicon NPN Power Transistor BDY96DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators applications.ABSOLUTE MAXIMUM RATINGS(T =25
bdy96.pdf

isc Silicon NPN Power Transistor BDY96DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators applications.BSOLUTE MAXIMUM RATINGS(T =25
Datasheet: BDY91 , BDY92 , BDY93 , BDY93-01 , BDY94 , BDY94-01 , BDY95 , BDY96 , A733 , BDY97 , BDY97-01 , BDY98 , BDY99 , BEL100N , BEL100P , BEL149 , BEL187 .
History: MJW0281AT4TL | 2SB309 | MJE13007X9 | TMPA813S4 | 2SC1212C | U2T605 | ISC3244AS1
Keywords - BDY96-01 transistor datasheet
BDY96-01 cross reference
BDY96-01 equivalent finder
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BDY96-01 replacement
History: MJW0281AT4TL | 2SB309 | MJE13007X9 | TMPA813S4 | 2SC1212C | U2T605 | ISC3244AS1



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