BDY96-01 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDY96-01 Specs and Replacement

Type Designator: BDY96-01

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

BDY96-01 Substitution

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BDY96-01 datasheet

9.1. Size:301K njs

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9.2. Size:207K inchange semiconductor

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9.3. Size:202K inchange semiconductor

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isc Silicon NPN Power Transistor BDY96 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 1.5V(Max.) @ I = 2.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching regulators applications. BSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒

Detailed specifications: BDY91 , BDY92 , BDY93 , BDY93-01 , BDY94 , BDY94-01 , BDY95 , BDY96 , 2SD1047 , BDY97 , BDY97-01 , BDY98 , BDY99 , BEL100N , BEL100P , BEL149 , BEL187 .