All Transistors. BDY96-01 Datasheet

 

BDY96-01 Datasheet and Replacement


   Type Designator: BDY96-01
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
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BDY96-01 Datasheet (PDF)

 9.1. Size:301K  njs
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BDY96-01

 9.2. Size:207K  inchange semiconductor
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BDY96-01

isc Silicon NPN Power Transistor BDY96DDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators applications.ABSOLUTE MAXIMUM RATINGS(T =25

 9.3. Size:202K  inchange semiconductor
 bdy96.pdf pdf_icon

BDY96-01

isc Silicon NPN Power Transistor BDY96DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators applications.BSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: RN1909 | GES4890 | BFT33B | 2SC4551 | 2N2002 | NTE2547 | UN6110S

Keywords - BDY96-01 transistor datasheet

 BDY96-01 cross reference
 BDY96-01 equivalent finder
 BDY96-01 lookup
 BDY96-01 substitution
 BDY96-01 replacement

 

 
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