BDY97-01 Datasheet and Replacement
Type Designator: BDY97-01
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
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BDY97-01 Datasheet (PDF)
bdy97.pdf

isc Silicon NPN Power Transistor BDY97DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators applications.BSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: SDT96304 | MQ918 | 2SD1499-P | KRA357 | 2SC5681 | MRF215 | CMST5087
Keywords - BDY97-01 transistor datasheet
BDY97-01 cross reference
BDY97-01 equivalent finder
BDY97-01 lookup
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History: SDT96304 | MQ918 | 2SD1499-P | KRA357 | 2SC5681 | MRF215 | CMST5087



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