BF494 Transistor. Datasheet pdf. Equivalent

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BF494 Datasheet (PDF)

1.1. bf494_bf495.pdf Size:48K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF494; BF495 NPN medium frequency transistors 1997 Jul 08 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium frequency transistors BF494; BF495 FEATURES PINNING • Low current (max. 30 mA) PIN DESCRIPTION • Low voltage (max. 2

1.2. bf494.pdf Size:81K _fairchild_semi

July 2006 BF494 tm NPN RF Transistor TO-92 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 30 mA TJ Junction Temperature 150 °C TSTG Storage Temperature Range - 55 ~ 150 °C * Thes

1.3. bf494_bf495.pdf Size:142K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494 BF495 TO-92 Plastic Package High Voltage Video Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL Value UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage

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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |