BF591 Datasheet. Specs and Replacement
Type Designator: BF591 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.3 W
Maximum Collector-Base Voltage |Vcb|: 210 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO202
BF591 Substitution
- BJT ⓘ Cross-Reference Search
BF591 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF591; BF593 NPN high-voltage transistors 1997 Jul 02 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF591; BF593 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION High voltage (max. 210 V). 1 emitt... See More ⇒
Detailed specifications: BF569, BF569R, BF570, BF579, BF579R, BF583, BF585, BF587, MJE340, BF593, BF594, BF595, BF595S, BF596, BF597, BF597A, BF597B
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