2N3009 Specs and Replacement
Type Designator: 2N3009
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO5
- BJT ⓘ Cross-Reference Search
2N3009 datasheet
9.1. Size:176K ixys
ixbt12n300.pdf 
High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25 C to 150 C 3000 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247 (IXBH) VGEM Transient 30 V IC25 TC = 25 C 30 A ... See More ⇒
9.2. Size:202K ixys
ixth2n300p3hv ixtt2n300p3hv.pdf
Advance Technical Information High Voltage VDSS = 3000V IXTT2N300P3HV Power MOSFET ID25 = 2A IXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS Continuous 20 V V... See More ⇒
9.3. Size:172K ixys
ixbh32n300.pdf
Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH32N300 BIMOSFETTM Monolithic IXBT32N300 IC110 = 32A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V... See More ⇒
9.4. Size:202K ixys
ixbf42n300.pdf
Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBF42N300 Monolithic Bipolar MOS IC110 = 24A Transistor VCE(sat) 3.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 25 V 1 2 VGEM Transient 35 V ... See More ⇒
9.5. Size:196K ixys
ixbf22n300.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient ... See More ⇒
9.6. Size:198K ixys
ixbv22n300s.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBV22N300S BIMOSFETTM Monolithic IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V PLUS220SMDHV Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C ... See More ⇒
9.7. Size:245K ixys
mmix4b22n300.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V MMIX4B22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor C2 C1 VCE(sat) 2.7V G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G3 G4 C2 E3E4 G2 E2C4 Symbol Test Conditions Maximum Ratings G4 E3E4 C1 VCES TJ = 25 C to 150 C 3000 ... See More ⇒
9.8. Size:176K ixys
ixbh12n300.pdf
High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25 C to 150 C 3000 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247 (IXBH) VGEM Transient 30 V IC25 TC = 25 C 30 A ... See More ⇒
9.9. Size:246K ixys
ixbt12n300hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V TO-268 (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V VGEM Trans... See More ⇒
9.10. Size:268K ixys
ixbt42n300hv.pdf
Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBT42N300HV Monolithic Bipolar MOS IXBH42N300HV IC110 = 42A Transistor VCE(sat) 3.0V TO-268HV (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V TO-247HV (IXBH) VGES Continuous 25 V VGEM Trans... See More ⇒
9.11. Size:194K ixys
ixbf32n300.pdf
Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF32N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 VGES Continuous 20 V 5 VGEM Transie... See More ⇒
9.12. Size:268K ixys
ixbh42n300hv.pdf
Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBT42N300HV Monolithic Bipolar MOS IXBH42N300HV IC110 = 42A Transistor VCE(sat) 3.0V TO-268HV (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V TO-247HV (IXBH) VGES Continuous 25 V VGEM Trans... See More ⇒
9.13. Size:253K ixys
ixbh22n300hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3000 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247HV (IXBH) VGEM ... See More ⇒
9.14. Size:195K ixys
ixbf12n300.pdf
Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF12N300 BIMOSFETTM Monolithic IC90 = 12A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 VGES Continuous 20 V 5 VGEM Transie... See More ⇒
9.15. Size:246K ixys
ixba12n300hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V TO-268 (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V VGEM Trans... See More ⇒
9.16. Size:252K ixys
mmix4b12n300.pdf
Preliminary Technical Information High Voltage, High Gain MMIX4B12N300 VCES = 3000V BIMOSFETTM Monolithic IC110 = 11A Bipolar MOS Transistor VCE(sat) 3.2V C2 C1 G1 G2 (Electrically Isolated Tab) E2C4 E1C3 G3 G4 C2 G2 E3E4 E2C4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 VCES TC = 25 C to 150 C 3000 V Isolated Tab E3E4 VCG... See More ⇒
9.17. Size:172K ixys
ixbt32n300.pdf
Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH32N300 BIMOSFETTM Monolithic IXBT32N300 IC110 = 32A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V... See More ⇒
9.18. Size:253K ixys
ixbt22n300hv.pdf
Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3000 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247HV (IXBH) VGEM ... See More ⇒
9.19. Size:10K semelab
2n3007.pdf
2N3007 Dimensions in mm (inches). Bipolar NPNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPNP Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX,... See More ⇒
9.20. Size:31K bocasemi
2n3001.pdf
Boca Semiconductor Corp. BSC http //www.bocasemi.com ... See More ⇒
Detailed specifications: 2N2995, 2N2996, 2N2997, 2N2998, 2N2999, 2N30, 2N300, 2N3000, 2SA1943, 2N301, 2N3010, 2N3011, 2N3012, 2N3013, 2N3013R, 2N3014, 2N3015
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