2N3015 PDF and Equivalents Search

 

2N3015 Specs and Replacement


   Type Designator: 2N3015
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics


   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5
 

 2N3015 Substitution

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2N3015 datasheet

 9.2. Size:685K  rca
2n2869 2n301.pdf pdf_icon

2N3015

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2N3015

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 9.4. Size:51K  philips
2n3019 cnv 2.pdf pdf_icon

2N3015

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N3019 NPN medium power transistor 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter... See More ⇒

Detailed specifications: 2N3009 , 2N301 , 2N3010 , 2N3011 , 2N3012 , 2N3013 , 2N3013R , 2N3014 , TIP42C , 2N3016 , 2N3017 , 2N3018 , 2N3019 , 2N3019CSM , 2N3019S , 2N3019UB , 2N301A .

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