BF870 Specs and Replacement
Type Designator: BF870
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.6 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO202
BF870 Substitution
- BJT ⓘ Cross-Reference Search
BF870 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF870; BF872 PNP high-voltage transistors 1996 Dec 09 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP high-voltage transistors BF870; BF872 FEATURES Low feedback capacitance. handbook, halfpage APPLICATIONS For use in class-B video o... See More ⇒
Detailed specifications: BF859EA, BF860, BF869, BF869A, BF869BA, BF869EA, BF869S, BF869SA, BC548, BF870A, BF870BA, BF870EA, BF870S, BF870SA, BF871, BF871A, BF871BA
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