BF870EA Datasheet, Equivalent, Cross Reference Search
Type Designator: BF870EA
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.6 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO236
BF870EA Transistor Equivalent Substitute - Cross-Reference Search
BF870EA Datasheet (PDF)
9.1. Size:63K philips
bf870 bf872.pdf
bf870 bf872.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D067BF870; BF872PNP high-voltage transistors1996 Dec 09Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP high-voltage transistors BF870; BF872FEATURES Low feedback capacitance.handbook, halfpageAPPLICATIONS For use in class-B video o
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: BF870 | F106 | 3DD100C
