BFG134
Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG134
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1
W
Maximum Collector-Base Voltage |Vcb|: 25
V
Maximum Collector-Emitter Voltage |Vce|: 15
V
Maximum Collector Current |Ic max|: 0.15
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 7500
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package:
TO131
BFG134
Transistor Equivalent Substitute - Cross-Reference Search
BFG134
Datasheet (PDF)
9.1. Size:316K philips
bfg135.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFG135NPN 7GHz wideband transistorProduct specification 1995 Sep 13NXP Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistor PIN DESCRIPTIONin a plastic SOT223 envelope, lfpage41 emitterintended for wideband amplifier 2 baseapplications. The small emitt
9.2. Size:85K philips
bfg135 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG135NPN 7GHz wideband transistor1995 Sep 13Product specificationFile under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 7GHz wideband transistor BFG135DESCRIPTION PINNINGNPN silicon planar epitaxial transistorPIN DESCRIPTIONin a plastic SOT223 envelope, age41 emitterintended for wideband amplifier
9.3. Size:49K siemens
bfg135a.pdf
BFG 135ANPN Silicon RF Transistor For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor fT = 6 GHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Orderin
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