BFG196 Specs and Replacement

Type Designator: BFG196

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Collector Current |Ic max|: 0.12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 8000 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SOT89

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BFG196 datasheet

 ..1. Size:48K  siemens

bfg196.pdf pdf_icon

BFG196

BFG 196 NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configurat... See More ⇒

 9.1. Size:93K  philips

bfg197 bfg197x bfg197xr series 3.pdf pdf_icon

BFG196

DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor 1995 Sep 13 Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 Philips Semiconductors Product specification BFG197; BFG197/X; NPN 7 GHz wideband transistor BFG197/XR FEATURES PINNING High power gain PIN DESCRIPTION Low noise figure BF... See More ⇒

 9.2. Size:293K  philips

bfg198.pdf pdf_icon

BFG196

DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification 1995 Sep 12 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended fpage 4 1 emitter for wideband amplifier applications. 2 base The device features a ... See More ⇒

 9.3. Size:77K  philips

bfg198 3.pdf pdf_icon

BFG196

DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor 1995 Sep 12 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DESCRIPTION PINNING NPN planar epitaxial transistor in a PIN DESCRIPTION plastic SOT223 envelope, intended age 4 1 emitter for wideband amplifier applic... See More ⇒

Detailed specifications: BFG134, BFG135, BFG16A, BFG17, BFG17A, BFG193, BFG194, BFG195, 2SA1015, BFG197, BFG197X, BFG198, BFG19S, BFG23, BFG235, BFG25AX, BFG32

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