BFG33X Datasheet and Replacement

   Type Designator: BFG33X
   SMD Transistor Code: V16
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 9 V
   Maximum Collector-Emitter Voltage |Vce|: 7 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2000 MHz
   Collector Capacitance (Cc): 0.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
   Package: SOT143
     - BJT ⓘ Cross-Reference Search