BFP520II Specs and Replacement

Type Designator: BFP520II

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

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BFP520II datasheet

 8.1. Size:48K  siemens

 bfp520.pdf pdf_icon

BFP520II

SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metalization for high reliability SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz... See More ⇒

 8.2. Size:224K  infineon

 bfp520f.pdf pdf_icon

BFP520II

BFP520F Low profile high gain silicon NPN RF bipolar transistor Product description The BFP520F is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fifth generation RF bipolar transistor family. Its transition frequency fT of 45 GHz, high gain and low noise make the device suitable for applications up to 15 GHz. It remains cost competitiv... See More ⇒

Detailed specifications: BFP29, BFP35A, BFP519, BFP519II, BFP519III, BFP519V, BFP519VI, BFP520, TIP142, BFP520V, BFP520VI, BFP521, BFP521I, BFP521II, BFP521III, BFP521IV, BFP521V

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