All Transistors. BFP521I Datasheet

 

BFP521I Datasheet and Replacement


   Type Designator: BFP521I
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO18
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BFP521I Datasheet (PDF)

 9.1. Size:48K  siemens
 bfp520.pdf pdf_icon

BFP521I

SIEGET 45BFP 520NPN Silicon RF TransistorPreliminary data3 For highest gain low noise amplifier4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz1 VPS05605 Gold metalization for high reliability SIEGET 45 - Line Siemens Grounded Emitter Transistor 45 GHz

 9.2. Size:224K  infineon
 bfp520f.pdf pdf_icon

BFP521I

BFP520FLow profile high gain silicon NPN RF bipolar transistorProduct descriptionThe BFP520F is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fifth generation RF bipolar transistor family. Its transitionfrequency fT of 45 GHz, high gain and low noise make the device suitable for applicationsup to 15 GHz. It remains cost competitiv

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCY98 | BLV10 | BC548B | HEPS3060 | BFX84 | GES6004 | KTC3875S-G

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