BFQ135 Datasheet and Replacement
Type Designator: BFQ135
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.7 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 19 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 6500 MHz
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO129
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BFQ135 Datasheet (PDF)
bfq135 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBFQ135NPN 6.5 GHz wideband transistor1997 Nov 07Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 6.5 GHz wideband transistor BFQ135FEATURES DESCRIPTION Optimum temperature profile and NPN wideband transistor in a 4-leadfpage4excellent reli
bfq136 cnv 2.pdf

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bfq131 1.pdf

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RT2P01M | D44H6 | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | PDTA115TU
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History: RT2P01M | D44H6 | CTP1732 | DTA114TMFHA | 2SC3489 | CP502 | PDTA115TU



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