BFQ135 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFQ135
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2.7 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 19 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 6500 MHz
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: TO129
BFQ135 Transistor Equivalent Substitute - Cross-Reference Search
BFQ135 Datasheet (PDF)
bfq135 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ135NPN 6.5 GHz wideband transistor1997 Nov 07Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 6.5 GHz wideband transistor BFQ135FEATURES DESCRIPTION Optimum temperature profile and NPN wideband transistor in a 4-leadfpage4excellent reli
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bfq131 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFQ131NPN video transistor1995 Sep 26Product specificationFile under Discrete Semiconductors, SC05Philips Semiconductors Product specificationNPN video transistor BFQ131FEATURES DESCRIPTION Low output capacitance NPN silicon transistor in a 3-lead1plastic SOT54 package.2 High dissipation3 High gain bandwidth product.PI
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
