BFQ31R Specs and Replacement

Type Designator: BFQ31R

SMD Transistor Code: S3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 800 MHz

Collector Capacitance (Cc): 1.7 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SOT23

 BFQ31R Substitution

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BFQ31R datasheet

 9.1. Size:35K  diodes

 bfq31a.pdf pdf_icon

BFQ31R

SOT23 NPN SILICON PLANAR BFQ31A VHF/UHF TRANSISTOR ISSUE 4 MARCH 2001 PARTMARKING DETAILS BFQ31A S4 E C BFQ31AR S5 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 3V Continuous Collector Current IC 100 mA Base Current IB 50 mA Power Dissipation at Tamb=25 C Ptot 3... See More ⇒

 9.2. Size:28K  kec

 bfq31.pdf pdf_icon

BFQ31R

SEMICONDUCTOR BFQ31 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 MAXIMUM RATING (Ta=25 ) C 1.30 MAX 2 3 D 0.45+0.15/-0.05 CHARACTERISTIC SYMBOL RATING UNIT E 2.40+0.30/-0.20 1 G 1.90 VCBO Collector-Base Voltage 30 V H 0.95 J 0.13+0.10/-0.05 VCEO Colle... See More ⇒

Detailed specifications: BFQ28, BFQ29, BFQ29P, BFQ29R, BFQ30, BFQ31, BFQ31A, BFQ31AR, 2N4401, BFQ32, BFQ32C, BFQ32M, BFQ32S, BFQ33, BFQ33C, BFQ34, BFQ34T

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