BFQ32M Specs and Replacement

Type Designator: BFQ32M

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.075 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4500 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO72

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BFQ32M datasheet

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Detailed specifications: BFQ29R, BFQ30, BFQ31, BFQ31A, BFQ31AR, BFQ31R, BFQ32, BFQ32C, NJW0281G, BFQ32S, BFQ33, BFQ33C, BFQ34, BFQ34T, BFQ35, BFQ36, BFQ37

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