BFQ62 Specs and Replacement
Type Designator: BFQ62
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector Current |Ic max|: 0.09 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Package: SOT89
BFQ62 Substitution
- BJT ⓘ Cross-Reference Search
BFQ62 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor 1995 Sep 26 Product specification Supersedes data of 1995 Apr 11 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 FEATURES DESCRIPTION High power gain Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap... See More ⇒
Detailed specifications: BFQ54, BFQ54T, BFQ56, BFQ57, BFQ58, BFQ59, BFQ60, BFQ61, BC547, BFQ63, BFQ64, BFQ645, BFQ64P, BFQ65, BFQ66, BFQ67, BFQ67W
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