All Transistors. BFR19 Datasheet

 

BFR19 Datasheet and Replacement


   Type Designator: BFR19
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5
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BFR19 Datasheet (PDF)

 0.1. Size:57K  siemens
bfr194.pdf pdf_icon

BFR19

BFR 194PNP Silicon RF Transistor For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA Complementary type: BFR 106 (NPN)ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 194 RKs Q62702-F1346 1 = B 2 = E 3 = C S

 0.2. Size:56K  siemens
bfr193w.pdf pdf_icon

BFR19

BFR 193WNPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 193W RCs Q62702-F1510 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCol

 0.3. Size:56K  siemens
bfr193.pdf pdf_icon

BFR19

BFR 193NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers fT = 8GHz F = 1.3dB at 900MHzESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 193 RCs Q62702-F1218 1 = B 2 = E 3 = C SOT-23Maximum RatingsParameter Symbol Values UnitCollec

 0.4. Size:536K  infineon
bfr193f.pdf pdf_icon

BFR19

BFR193FLow Noise Silicon Bipolar RF Transistor For low noise, high-gain amplifiers up to 2 GHz23 For linear broadband amplifiers1 fT = 8 GHz, NFmin = 1 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free product Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive device, observe handling precaution!Type Marking Pin

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: BF316A

Keywords - BFR19 transistor datasheet

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