BFR53 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR53
SMD Transistor Code: N1_N1p
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 18 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 1.3 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT23
BFR53 Transistor Equivalent Substitute - Cross-Reference Search
BFR53 Datasheet (PDF)
..1. Size:75K philips
bfr53 2.pdf
bfr53 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFR53NPN 2 GHz wideband transistor1997 Oct 28Product specificationSupersedes data of September 1995File under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz wideband transistor BFR53FEATURES PINNINGfpage 3 Very low intermodulation distortionPIN DESCRIPTION Very high power gain.1 base2 emi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
