BFR53 Specs and Replacement

Type Designator: BFR53

SMD Transistor Code: N1_N1p

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 18 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1200 MHz

Collector Capacitance (Cc): 1.3 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT23

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BFR53 datasheet

 ..1. Size:75K  philips

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BFR53

DISCRETE SEMICONDUCTORS DATA SHEET BFR53 NPN 2 GHz wideband transistor 1997 Oct 28 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFR53 FEATURES PINNING fpage 3 Very low intermodulation distortion PIN DESCRIPTION Very high power gain. 1 base 2 emi... See More ⇒

Detailed specifications: BFR44, BFR44A, BFR44B, BFR44C, BFR48, BFR49, BFR50, BFR51, BDT88, BFR53R, BFR54, BFR56, BFR57, BFR58, BFR59, BFR60, BFR61

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