BFR92A Datasheet, Equivalent, Cross Reference Search
Type Designator: BFR92A
SMD Transistor Code: +P2_2P_P1_P2_P2p_WP2
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5000 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT23
BFR92A Transistor Equivalent Substitute - Cross-Reference Search
BFR92A Datasheet (PDF)
bfr92a 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFR92ANPN 5 GHz wideband transistor1997 Oct 29Product specificationSupersedes data of September 1995File under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR92AFEATURES DESCRIPTION High power gain NPN wideband transistor in a plastic page 3SOT23 package. Low noise figure
bfr92a n.pdf
BFR92ANPN 5 GHz wideband transistorRev. 04 2 March 2009 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http
bfr92a.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor BFR92ADESCRIPTIONLow Noise and High GainNF = 1.3 dB TYP.@V = 10 V, I = 7 mA, f = 1.0 GHzCE CHigh Power GainS 2 = 11.5 dB TYP.21e@V = 10 V, I = 20 mA, f = 1.0 GHzCE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low noise amplifier at VHF, UH
bfr92alt.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BFR92ALT1/DThe RF LineNPN SiliconBFR92ALT1High-Frequency TransistorsDesigned primarily for use in highgain, lownoise, smallsignal UHF andmicrowave amplifiers constructed with thick and thinfilm circuits using surfacemount components. T1 suffix indicates tape and reel packaging of 3,000 units per reel.
bfr92at 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173BFR92ATNPN 5 GHz wideband transistorProduct specification 2000 Mar 28Supersedes data of 1999 Nov 02Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR92ATFEATURES DESCRIPTION High power gain Silicon NPN transistor encapsulated3fpagein a plastic SOT416 (SC-75) package. Gold metallization ensures
bfr92aw 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFR92AWNPN 5 GHz wideband transistor1995 Sep 18Product specificationSupersedes data of October 1992File under discrete semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR92AWFEATURES DESCRIPTIONhandbook, 2 columns3 High power gain Silicon NPN transistor encapsulatedin a plastic SOT323
bfr92ac1a.pdf
SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A Silicon Planar Epitaxial NPN Transistor Hermetic Ceramic Surface Mount Package (SOT23 Compatible) Suitable For UHF Applications Up To 1.0GHz Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO Collector Base Voltage 20V VCEO Collector
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
