BFX62 Specs and Replacement

Type Designator: BFX62

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.13 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.012 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 0.3 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO72

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BFX62 datasheet

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Detailed specifications: BFX58I, BFX58II, BFX58III, BFX59, BFX59F, BFX59R, BFX60, BFX61, S8050, BFX65, BFX66, BFX67, BFX68, BFX68A, BFX69, BFX69A, BFX70

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