BFX87 Specs and Replacement
Type Designator: BFX87
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO5
BFX87 Substitution
- BJT ⓘ Cross-Reference Search
BFX87 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BFX87 BFX88 TO-39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BFX87 BFX88 UNIT Collector -Base Voltage VCBO 50 40 V Collector -Emitter Voltage VCEO 50 40 V Collector Current (DC) IC 600 mA Peak value ICM 600 mA Emitter Current IEM 600 mA Power Dissipati... See More ⇒
Detailed specifications: BFX80, BFX80DCSM, BFX81, BFX81DCSM, BFX81DCSMM, BFX84, BFX85, BFX86, BD335, BFX88, BFX89, BFX90, BFX91, BFX92, BFX92A, BFX93, BFX93A
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