BFX95 Specs and Replacement
Type Designator: BFX95
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO18
BFX95 Substitution
- BJT ⓘ Cross-Reference Search
BFX95 datasheet
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Detailed specifications: BFX90, BFX91, BFX92, BFX92A, BFX93, BFX93A, BFX94, BFX94A, 2SD313, BFX95A, BFX96, BFX96A, BFX97, BFX97A, BFX98, BFX99, BFXP94
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