2N3115 Specs and Replacement
Type Designator: 2N3115
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO18
2N3115 Substitution
- BJT ⓘ Cross-Reference Search
2N3115 datasheet
SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N3114CSM High Voltage Hermetic Ceramic Surface Mount Package Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VCBO Collector Base Voltage 150V VCEO Collector Emitter V... See More ⇒
Detailed specifications: 2N3107, 2N3108, 2N3109, 2N311, 2N3110, 2N3110S, 2N3114, 2N3114S, BC327, 2N3116, 2N3117, 2N3118, 2N3119, 2N312, 2N3120, 2N3121, 2N3122
Keywords - 2N3115 pdf specs
2N3115 cross reference
2N3115 equivalent finder
2N3115 pdf lookup
2N3115 substitution
2N3115 replacement
