BFY50E Datasheet, Equivalent, Cross Reference Search
Type Designator: BFY50E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 44
Noise Figure, dB: -
Package: TO5
BFY50E Transistor Equivalent Substitute - Cross-Reference Search
BFY50E Datasheet (PDF)
bfy50 bfy51 bfy52 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFY50; BFY51; BFY52NPN medium power transistors1997 Apr 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistors BFY50; BFY51; BFY52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 35 V)
bfy50.pdf
BFY50/51MEDIUM POWER AMPLIFIERDESCRIPTIONThe BFY50 and BFY52 are silicon planarepitaxial NPN transistors in Jedec TO-39 metalcase. They are intended for general purposelinear and switching applications.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitBFY50 BFY51V Collector-Base Voltage (I = 0) 80 60 VCBO EV Collector-Emitter Voltage (
bfy50 bfy51 bfy52.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52TO-39Metal Can PackageGeneral Purpose Transistors.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BFY50 BFY51 BFY52 UNITSVCEOCollector Emitter Voltage 35 30 20 VVCBOCollector Base Voltage 80 60 40 VVEBOE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
