BFY50L Specs and Replacement
Type Designator: BFY50L
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
BFY50L Substitution
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BFY50L datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power transistors 1997 Apr 22 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistors BFY50; BFY51; BFY52 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 35 V)... See More ⇒
BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BFY50 BFY51 V Collector-Base Voltage (I = 0) 80 60 V CBO E V Collector-Emitter Voltage (... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BFY50 BFY51 BFY52 UNITS VCEO Collector Emitter Voltage 35 30 20 V VCBO Collector Base Voltage 80 60 40 V VEBO E... See More ⇒
Detailed specifications: BFY48BK, BFY48R, BFY49, BFY49R, BFY49RK, BFY50, BFY50E, BFY50I, TIP3055, BFY51, BFY51I, BFY52, BFY53, BFY55, BFY56, BFY56A, BFY56B
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