All Transistors. BFY50L Datasheet

 

BFY50L Datasheet and Replacement


   Type Designator: BFY50L
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO5
 

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BFY50L Datasheet (PDF)

 9.1. Size:55K  philips
 bfy50 bfy51 bfy52 cnv 2.pdf pdf_icon

BFY50L

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFY50; BFY51; BFY52NPN medium power transistors1997 Apr 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistors BFY50; BFY51; BFY52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 35 V)

 9.2. Size:46K  st
 bfy50.pdf pdf_icon

BFY50L

BFY50/51MEDIUM POWER AMPLIFIERDESCRIPTIONThe BFY50 and BFY52 are silicon planarepitaxial NPN transistors in Jedec TO-39 metalcase. They are intended for general purposelinear and switching applications.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitBFY50 BFY51V Collector-Base Voltage (I = 0) 80 60 VCBO EV Collector-Emitter Voltage (

 9.3. Size:132K  cdil
 bfy50 bfy51 bfy52.pdf pdf_icon

BFY50L

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52TO-39Metal Can PackageGeneral Purpose Transistors.ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BFY50 BFY51 BFY52 UNITSVCEOCollector Emitter Voltage 35 30 20 VVCBOCollector Base Voltage 80 60 40 VVEBOE

Datasheet: BFY48BK , BFY48R , BFY49 , BFY49R , BFY49RK , BFY50 , BFY50E , BFY50I , 13009 , BFY51 , BFY51I , BFY52 , BFY53 , BFY55 , BFY56 , BFY56A , BFY56B .

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