BLT92-SL Specs and Replacement

Type Designator: BLT92-SL

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Collector Current |Ic max|: 1.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: M164

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BLT92-SL datasheet

 9.1. Size:56K  philips

 blt92.pdf pdf_icon

BLT92-SL

DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor May 1989 Product specification Philips Semiconductors Product specification UHF power transistor BLT92/SL DESCRIPTION QUICK REFERENCE DATA RF performance at Tmb =25 C in a common-emitter class-B circuit NPN silicon planar epitaxial transistor primarily intended for use in handheld MODE OF OPERATION VCE f PL Gp C ... See More ⇒

Detailed specifications: BJ1A, BLT50, BLT80, BLT90, BLT90-SL, BLT91, BLT91-SL, BLT92, BD139, BLT93-SL, BLU10-12, BLU20-12, BLU28, BLU30-12, BLU30-28, BLU33, BLU45-12

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