BLV30-12 Specs and Replacement
Type Designator: BLV30-12
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 32 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: M111
BLV30-12 Substitution
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BLV30-12 datasheet
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Detailed specifications: BLU99, BLV10, BLV11, BLV15-12, BLV20, BLV21, BLV25, BLV30, A1941, BLV31, BLV32, BLV32F, BLV33, BLV33F, BLV34, BLV34F, BLV36
Keywords - BLV30-12 pdf specs
BLV30-12 cross reference
BLV30-12 equivalent finder
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History: T06 | SMUN5236DW
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