BLV31 Specs and Replacement

Type Designator: BLV31

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 48 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1100 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO128

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BLV31 datasheet

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Detailed specifications: BLV10, BLV11, BLV15-12, BLV20, BLV21, BLV25, BLV30, BLV30-12, TIP31C, BLV32, BLV32F, BLV33, BLV33F, BLV34, BLV34F, BLV36, BLV37

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