BLW34 Datasheet and Replacement
Type Designator: BLW34
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 31 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3300 MHz
Collector Capacitance (Cc): 27 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
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BLW34 Datasheet (PDF)
blw34.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLW34UHF linear power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationUHF linear power transistor BLW34area. The combination of optimumDESCRIPTIONthermal design and the application ofN-P-N silicon planar epitaxialgold sandwich metallizationtransistor primarily intended for use inrealizes excellen
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KSA1241O | 17520 | CS9011I | KSA643Y | LDTA115EET1G | KRA751U | PHPT60406NY
Keywords - BLW34 transistor datasheet
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History: KSA1241O | 17520 | CS9011I | KSA643Y | LDTA115EET1G | KRA751U | PHPT60406NY



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