All Transistors. BLW60 Datasheet

 

BLW60 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BLW60
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 103 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 300 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO128

 BLW60 Transistor Equivalent Substitute - Cross-Reference Search

   

BLW60 Datasheet (PDF)

 0.1. Size:86K  philips
 blw60c.pdf

BLW60 BLW60

DISCRETE SEMICONDUCTORSDATA SHEETBLW60CVHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationVHF power transistor BLW60CMatched hFE groups are available onDESCRIPTIONrequest.N-P-N silicon planar epitaxialIt has a 3/8" capstan envelope with atransistor intended for use in class-A,ceramic cap. All leads are isolatedB and C op

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N2127

 

 
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