BLW77 Specs and Replacement

Type Designator: BLW77

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 245 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 500 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: M174

 BLW77 Substitution

- BJT ⓘ Cross-Reference Search

 

BLW77 datasheet

 ..1. Size:92K  philips

 blw77.pdf pdf_icon

BLW77

DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor August 1986 Product specification Philips Semiconductors Product specification HF/VHF power transistor BLW77 mismatch conditions. Transistors are DESCRIPTION delivered in matched hFE groups. N-P-N silicon planar epitaxial 1 The transistor has a 2" flange transistor intended for use in class-AB envelope with a ce... See More ⇒

Detailed specifications: BLW68, BLW69, BLW70, BLW71, BLW72, BLW73, BLW75, BLW76, 2N2222, BLW78, BLW79, BLW80, BLW81, BLW82, BLW83, BLW84, BLW85

Keywords - BLW77 pdf specs

 BLW77 cross reference

 BLW77 equivalent finder

 BLW77 pdf lookup

 BLW77 substitution

 BLW77 replacement