BLW77 Datasheet and Replacement
Type Designator: BLW77
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 245 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: M174
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BLW77 Datasheet (PDF)
blw77.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLW77HF/VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationHF/VHF power transistor BLW77mismatch conditions. Transistors areDESCRIPTIONdelivered in matched hFE groups.N-P-N silicon planar epitaxial1The transistor has a 2" flangetransistor intended for use in class-ABenvelope with a ce
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KSA1241O | UMT2907A | PHPT60406NY | KSA643Y | CS9011I | SST2907AHZG | LDTA115EET1G
Keywords - BLW77 transistor datasheet
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History: KSA1241O | UMT2907A | PHPT60406NY | KSA643Y | CS9011I | SST2907AHZG | LDTA115EET1G



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