BLW87 Datasheet and Replacement
Type Designator: BLW87
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 76 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M174
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BLW87 Datasheet (PDF)
blw87.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLW87VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLW87It has a 3/8" flange envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the flange.transistor intended for use in class-A,B and C operated mobile h.f. andv.h.f.
Datasheet: BLW79 , BLW80 , BLW81 , BLW82 , BLW83 , BLW84 , BLW85 , BLW86 , TIP122 , BLW89 , BLW90 , BLW91 , BLW92 , BLW93 , BLW94 , BLW95 , BLW96 .
History: 2SC999A | 2SC433 | BSS55B | 2N1056 | UN9217R | KT8107D2 | ECG2306
Keywords - BLW87 transistor datasheet
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History: 2SC999A | 2SC433 | BSS55B | 2N1056 | UN9217R | KT8107D2 | ECG2306



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