BLW87 Specs and Replacement
Type Designator: BLW87
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 76 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: M174
BLW87 Substitution
- BJT ⓘ Cross-Reference Search
BLW87 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLW87 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLW87 It has a 3/8" flange envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the flange. transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. ... See More ⇒
Detailed specifications: BLW79, BLW80, BLW81, BLW82, BLW83, BLW84, BLW85, BLW86, S8050, BLW89, BLW90, BLW91, BLW92, BLW93, BLW94, BLW95, BLW96
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