BLW87 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLW87
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 76 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M174
BLW87 Transistor Equivalent Substitute - Cross-Reference Search
BLW87 Datasheet (PDF)
..1. Size:66K philips
blw87.pdf
blw87.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLW87VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLW87It has a 3/8" flange envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the flange.transistor intended for use in class-A,B and C operated mobile h.f. andv.h.f.
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2N2079
