BLX32 Specs and Replacement
Type Designator: BLX32
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 145 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO63
BLX32 Substitution
- BJT ⓘ Cross-Reference Search
BLX32 datasheet
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Detailed specifications: BLX24, BLX25, BLX26, BLX27, BLX28, BLX29, BLX30, BLX31, TIP31, BLX33, BLX34, BLX35, BLX36, BLX37, BLX38, BLX39, BLX40
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