BLX95 Datasheet and Replacement

   Type Designator: BLX95
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 3 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 33 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 600 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: M164
      - BJT Cross-Reference Search