BLY87A Specs and Replacement
Type Designator: BLY87A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 17 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO61
BLY87A Substitution
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BLY87A datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLY87C It has a 3/8" capstan envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the stud. transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor August 1986 Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification VHF power transistor BLY87C It has a 3/8" capstan envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the stud. transistor intended for use in class-A... See More ⇒
Detailed specifications: BLY80, BLY81, BLY82, BLY83, BLY84, BLY85, BLY86, BLY87, TIP120, BLY87C, BLY88, BLY88A, BLY88C, BLY88T, BLY89, BLY89A, BLY89C
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History: BLY88
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